Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.

SUPPLEMENTAL MATERIAL Flexible nanomembrane photonic-crystal cavities for tensilely strained-germanium light emission

Novel optoelectronic devices for mid-infrared applications: from intersubband thermophotovoltaic detectors to Germanium nanomembrane light emitters

Optoelectronic devices operating in the mid-infrared spectral region are attracting increasing attention due to potential applications in a wide range of disciplines. For example, mid-infrared photodetectors play a key role in thermophotovoltaic (TPV) energy conversion, whereby a photovoltaic device is used to extract electrical power from heat radiation. This technology is attractive for waste...

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes.

We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Gamma valley. Room-temperature EL ...

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emittin...

Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure present...